Silica and Alumina Thin Films Grown by Liquid Phase Deposition
This work demonstrates the condition optimization during liquid phase deposition (LPD) of SiO2/GaAs films. LPD method is further applied to form Al2O3 films on semiconductors with poison-free materials. Proceeding at room temperature with inexpensive equipment, LPD of silica and alumina films is potentially serviceable in microelectronics and related spheres.
Z.Y. Zhong, H. Saka, T.H. Kim, E.A. Holm, Y.F. Han and X.S. Xie
J. Sun et al., "Silica and Alumina Thin Films Grown by Liquid Phase Deposition", Materials Science Forum, Vols. 475-479, pp. 1725-1728, 2005