Silica and Alumina Thin Films Grown by Liquid Phase Deposition

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This work demonstrates the condition optimization during liquid phase deposition (LPD) of SiO2/GaAs films. LPD method is further applied to form Al2O3 films on semiconductors with poison-free materials. Proceeding at room temperature with inexpensive equipment, LPD of silica and alumina films is potentially serviceable in microelectronics and related spheres.

Info:

Periodical:

Materials Science Forum (Volumes 475-479)

Main Theme:

Edited by:

Z.Y. Zhong, H. Saka, T.H. Kim, E.A. Holm, Y.F. Han and X.S. Xie

Pages:

1725-1728

DOI:

10.4028/www.scientific.net/MSF.475-479.1725

Citation:

J. Sun et al., "Silica and Alumina Thin Films Grown by Liquid Phase Deposition", Materials Science Forum, Vols. 475-479, pp. 1725-1728, 2005

Online since:

January 2005

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Price:

$35.00

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