Simulation of the MOCVD Reactor for ZnO Growth

Abstract:

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In this paper we have characterized the performance of a vertical metalorganic chemical vapor deposition (MOCVD) reactor used for deposition of ZnO thin films. The equations of the mathematical model are solved numerically using a control-volume-based finite difference method. A two-dimensional model is put forward to study the dependence of the growth rate on the inlet flow rate and susceptor temperature. The mass-fraction distribution of the reactants has been studied as a function of the position above the substrate, which shows that gas phase pre-reaction in our reactor is well confined. The simulation results are useful for the practical growth of ZnO.

Info:

Periodical:

Materials Science Forum (Volumes 475-479)

Main Theme:

Edited by:

Z.Y. Zhong, H. Saka, T.H. Kim, E.A. Holm, Y.F. Han and X.S. Xie

Pages:

1833-1836

DOI:

10.4028/www.scientific.net/MSF.475-479.1833

Citation:

S.M. Liu et al., "Simulation of the MOCVD Reactor for ZnO Growth", Materials Science Forum, Vols. 475-479, pp. 1833-1836, 2005

Online since:

January 2005

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Price:

$35.00

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