Simulation of the MOCVD Reactor for ZnO Growth

Abstract:

Article Preview

In this paper we have characterized the performance of a vertical metalorganic chemical vapor deposition (MOCVD) reactor used for deposition of ZnO thin films. The equations of the mathematical model are solved numerically using a control-volume-based finite difference method. A two-dimensional model is put forward to study the dependence of the growth rate on the inlet flow rate and susceptor temperature. The mass-fraction distribution of the reactants has been studied as a function of the position above the substrate, which shows that gas phase pre-reaction in our reactor is well confined. The simulation results are useful for the practical growth of ZnO.

Info:

Periodical:

Materials Science Forum (Volumes 475-479)

Main Theme:

Edited by:

Z.Y. Zhong, H. Saka, T.H. Kim, E.A. Holm, Y.F. Han and X.S. Xie

Pages:

1833-1836

Citation:

S.M. Liu et al., "Simulation of the MOCVD Reactor for ZnO Growth", Materials Science Forum, Vols. 475-479, pp. 1833-1836, 2005

Online since:

January 2005

Export:

Price:

$38.00

[1] W. K. Cho, D. H. Choi: Int. J. Heat Mass Transfer 43 (2000) 1851.

[2] L. Kadinski, V. Merai, A. Parekh, J. Ramer, E.A. Armour, R. Stall, A. Gurary, A. Galyukov, and Y. Makarov, J. Crystal Growth 261 (2004) 175.

DOI: https://doi.org/10.1016/j.jcrysgro.2003.11.083

[3] Y. Akiyama, N. Imaishi, Y. Shin, S. Jung, J. Crystal Growth 241 (2002) 352.

[4] S. Patnaik, R.A. brown, C.A. Wang, J. Crystal Growth 96 (1989) 153.

[5] Z. Nami. O. Misman, A. Erbil, and G.S. May, J. Crystal Growth179 (1991) 522.

[6] G.J. Zhou, Z.Y. Yan, S.X. X, and K.B. Zhang, Hydromechanics (Higher Education Press, China. 1992) (in Chinese).

[7] W.Y. Chung, D.H. Kim, Y.S. Cho, J. Crystal Growth180 (1997) 691 Fig. 5 Different growth rates for varied susceptor temperature. Fig. 6. Change of growth rate as the different flow rate.

Fetching data from Crossref.
This may take some time to load.