Morphology of Primary Silicon and its Growth Mechanism in Hypereutectic Al-Si Alloys during Melt Overheating Treatment

Abstract:

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The relationships between the morphologies of primary silicon and undissolved silicon particles in melt of Al-Si hypereutectic alloys are studied by holding the melt from 600 to 1100°C and then quench interrupting. The variation of growth process and mechanism of primary silicon is also investigated. The results show that undissolved silicon particles in the melt would become the nuclei of primary silicon precipitated in solidification and there is a close relationship between the shape of primary silicon and undissolved silicon particles. The growth of silicon would follow not only twin plane re-entrant edge (TPRE), but also layer mechanism as well. Meanwhile, the shape of primary silicon also relied on kinetic surroundings, such as solute transportation. At higher overheating temperatures of the melt, the primary silicon takes star-like and tree-like shapes.

Info:

Periodical:

Materials Science Forum (Volumes 475-479)

Main Theme:

Edited by:

Z.Y. Zhong, H. Saka, T.H. Kim, E.A. Holm, Y.F. Han and X.S. Xie

Pages:

2587-2590

DOI:

10.4028/www.scientific.net/MSF.475-479.2587

Citation:

R. Zhang et al., "Morphology of Primary Silicon and its Growth Mechanism in Hypereutectic Al-Si Alloys during Melt Overheating Treatment", Materials Science Forum, Vols. 475-479, pp. 2587-2590, 2005

Online since:

January 2005

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$35.00

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