MOCVD Growth and Annealing of Gallium Oxide Thin Film and Its Structural Characterization

Abstract:

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We have demonstrated the production of gallium oxide thin films on various substrates such as Si(111), SiO2, and sapphire by metalorganic chemical vapor deposition using the trimethylgallium (TMGa) as a precursor in the presence of oxygen. The XRD data revealed that the as-deposited gallium oxide films were fully amorphous but very small crystallites with monoclinic structures were found with the thermal annealing at a sufficiently high temperature, regardless of substrate materials. The AFM analysis indicated that the surface roughness increased by the thermal annealing.

Info:

Periodical:

Materials Science Forum (Volumes 475-479)

Main Theme:

Edited by:

Z.Y. Zhong, H. Saka, T.H. Kim, E.A. Holm, Y.F. Han and X.S. Xie

Pages:

3377-3380

DOI:

10.4028/www.scientific.net/MSF.475-479.3377

Citation:

H. W. Kim and N. H. Kim, "MOCVD Growth and Annealing of Gallium Oxide Thin Film and Its Structural Characterization", Materials Science Forum, Vols. 475-479, pp. 3377-3380, 2005

Online since:

January 2005

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$35.00

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