MOCVD Growth and Annealing of Gallium Oxide Thin Film and Its Structural Characterization
We have demonstrated the production of gallium oxide thin films on various substrates such as Si(111), SiO2, and sapphire by metalorganic chemical vapor deposition using the trimethylgallium (TMGa) as a precursor in the presence of oxygen. The XRD data revealed that the as-deposited gallium oxide films were fully amorphous but very small crystallites with monoclinic structures were found with the thermal annealing at a sufficiently high temperature, regardless of substrate materials. The AFM analysis indicated that the surface roughness increased by the thermal annealing.
Z.Y. Zhong, H. Saka, T.H. Kim, E.A. Holm, Y.F. Han and X.S. Xie
H. W. Kim and N. H. Kim, "MOCVD Growth and Annealing of Gallium Oxide Thin Film and Its Structural Characterization", Materials Science Forum, Vols. 475-479, pp. 3377-3380, 2005