Preparation and Microwave Permittivity of Nano-Sized Si/C/N Powder

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Nano-sized Si/C/N powders are prepared from hexamethyldisilazane ((CH3)3Si)2NH) by chemical vapor deposition (CVD) at different pyrolysis temperatures from 900°C to 1200°C. The as-formed Si/C/N nano powder is amorphous, and after controlled heat-treatment, SiC crystals formed. The composition of the Si/C/N powders prepared at different conditions is analyzed and the result shows that the nitrogen content of the Si/C/N powder is related to the synthesizing temperature. Si/C/N powders heat-treated at different temperatures are mixed with paraffin wax and the microwave permittivity of the mixture is measured. The result shows that the e¢, e², and the dissipation factor tg d ( e²/ e¢) of the mixture are high at the frequency of 8.2~12.4GHz, and the nitrogen content and the degree of crystallization have influence on the microwave permittivity. We believe that the high value of e¢, e² ,and tg d are due to the dielectric relaxation as the result of nitrogen atoms doped in silicon carbide lattice.

Info:

Periodical:

Materials Science Forum (Volumes 475-479)

Main Theme:

Edited by:

Z.Y. Zhong, H. Saka, T.H. Kim, E.A. Holm, Y.F. Han and X.S. Xie

Pages:

3571-3574

DOI:

10.4028/www.scientific.net/MSF.475-479.3571

Citation:

X. K. Liu et al., "Preparation and Microwave Permittivity of Nano-Sized Si/C/N Powder", Materials Science Forum, Vols. 475-479, pp. 3571-3574, 2005

Online since:

January 2005

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$35.00

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