Synthesis of Bamboo-Shaped Gallium Nitride Nanorods
Heagonal GaN nanorods have been synthesized through ammoniating ZnO/Ga2O3 films deposited by radio frequency(rf) magnetron sputtering on Si(111) substrates.X-ray diffraction(XRD), Fourier transform infrared spectrophotometer (FTIR), transimission electron microscopy(TEM), high-resolution transmission electron microscopy(HRTEM) and selected-area electron diffraction (SAED) are used to analyze the structure,composition and morphology of the synthesized GaN nanorods. TEM result shows that GaN nanorods own bamboo-shaped morphalogy and have a single-crystal hexagonal wurtzite structure.The average length and dimeter of the nanorods are 3μm and 50 nm espectively.Ga2O3 and NH3 reactived directly and synthesized GaN nanorods without any catalyzer and the process of space-confined reactions.
Z.Y. Zhong, H. Saka, T.H. Kim, E.A. Holm, Y.F. Han and X.S. Xie
Z. Z. Dong et al., "Synthesis of Bamboo-Shaped Gallium Nitride Nanorods", Materials Science Forum, Vols. 475-479, pp. 3575-3578, 2005