Influence of Film Thickness on Intrinsic Growth Stress and Raman Evaluation of Tetrahedral Amorphous Carbon Films

Abstract:

Article Preview

To investigate the effects of film thickness on Raman characterization and intrinsic stress of tetrahedral amorphous carbon and ascertain the correlations between stress and Raman spectra, the ta-C films with different film thickness were deposited on the polished P-type (100) c-silicon substrate with the same conditions by the filtered cathodic vacuum arc technology. The film thickness was measured by the surface profiler and the atomic force microscope; stress was calculated according to the curvature of the stress samples examined by the surface profiler; the microstructure of the films was characterized by the Ramanscope. It has been shown that the stress drops down continuously and the dropping rate turns mild with the increase of film thickness. When the film thickness surpasses 30 nm, the compressive stress is kept at less than 5 GPa. The intensity of the first and second order peak of the c-Si substrate in the visible Raman spectra gradually depresses with the increase of thickness. However, the FWHM is minimal and the maximal intensity is highest from 50 nm to 80 nm, accordingly the clearest Raman signals can be acquired in this scale. Additionally, the position of the asymmetric broad peak gradually shifts towards the lower wavenumber with the increase of thickness and the decease of intrinsic stress.

Info:

Periodical:

Materials Science Forum (Volumes 475-479)

Main Theme:

Edited by:

Z.Y. Zhong, H. Saka, T.H. Kim, E.A. Holm, Y.F. Han and X.S. Xie

Pages:

3627-3630

DOI:

10.4028/www.scientific.net/MSF.475-479.3627

Citation:

J. Q. Zhu et al., "Influence of Film Thickness on Intrinsic Growth Stress and Raman Evaluation of Tetrahedral Amorphous Carbon Films", Materials Science Forum, Vols. 475-479, pp. 3627-3630, 2005

Online since:

January 2005

Export:

Price:

$38.00

[1] J. Robertson: Mater. Sci. Engeer. Vol. R37 (2002), p.129.

[2] A. Yu. Belov, H.U. Jäger: Surf. Coat. Technol. Vol. 151~152 (2002), p.128.

[3] J.Q. Zhu, J.H. Wang, S. Meng, J. Han and L. Zhang: Acta Physica Sinica Vol. 53 (2004), p.1150.

[4] B.K. Gupta, B. Bhushan: Thin Solid Films Vol. 270 (1995), p.391.

[5] D. Sheeja, B.K. Tay, K.W. Leong and C.H. Lee: Diamond Relat. Mater. Vol. 11 (2002), p.1643.

[6] T.H. Roth, K.H. Kloos, E. Broszeit: Thin Solid Films, Vol. 153 (1987), p.123.

[7] D.R. McKenzie, D. Muller and B.A. Pailthorpe: Phys. Rev. Lett. Vol. 67 (1991), p.773.

[8] M.C. Polo, J.L. Andu´ jar, A. Hart, J. Robertson and W.I. Milne: Diamond Relat. Mater. Vol. 9 (2000), p.663.

[9] T.A. Friedmann, J.P. Sullivan, J.A. Knapp, D.R. Tallant, D.M. Follstaedt, D.L. Medlin and P. B. Mirkarimi: Appl. Phys. Lett. Vol. 71 (1997), p.3820.

[10] K.W.R. Gilkes, S. Prawer, K.W. Nugent, J. Robertson, H.S. Sands, Y. Lifshitz and X. Shi: J. Appl. Phys. Vol. 87 (2000), p.7283.

[11] C.A. Davis, G.A.J. Amaratunga and K.M. Knowles: Phys. Rev. Lett. Vol. 80 (1998), p.3280.

[12] J.P. Zhao and Z.Y. Chen: Physical Review B Vol. 63 (2001), p.115318.

[13] Y. Lifshitz, S.R. Kasi and J.W. Rabalais: Phys. Rev. Lett. Vol. 62 (1989), p.1290.

[14] J.J. Dong and D. A. Drabold: Phys. Rev. B Vol. 57 (1998), p.15591.

[15] S. Waidmann, M. Knupfer, J. Fink, B. Kleinsorge and J. Robertson: Diamond Relat. Mater. Vol. 9 (2000), p.722.

[16] E. G. Gerstner, D.R. McKenzie, M.K. Puchert, P.Y. Timbrell and J. Zou: J. Vac. Sci. Technol. A Vol. 13 (1995).

[17] H.O. Pierson: Handbook of Carbon, Graphite, Diamond and Fullerenes - Properties, Processing and Applications (Noyes: William Andrew Publishing, 1993).

[18] Z.Y. Chen, J.P. Zhao, T. Yano, T. Ooie, M. Yoneda and J. Sakakibara: Journal of Applied Physics Vol. 88 (2000), p.2305.

[19] Joel W. Ager III, Simone Anders, Andre Anders, and Ian G. Brown: Applied Physics Letters 66 (1995), 3444.

[20] J.K. Shin, C.S. Lee, K.R. Lee, and K.Y. Eun: Appl. Phys. Lett. Vol. 78 (2001), p.631.

In order to see related information, you need to Login.