Improvement of Adhesion of Cubic Boron Nitride Films: Effect of Interlayer and Deposition Parameters

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Diamond and B4C coatings were used as an interlayer for the growth of cubic boron nitride thin films on c-silicon. By employing a B-C-N gradient layer on top of the B4C interlayer, improved adhesion occured between BN and B4C. A multi-step process after the nucleation of c-BN was found very helpful for improving the adhesion of c-BN on silicon with interlayers. Residual stress of c-BN thin film was significantly decreased by using a new post-deposition annealing treatment.

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Periodical:

Materials Science Forum (Volumes 475-479)

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Edited by:

Z.Y. Zhong, H. Saka, T.H. Kim, E.A. Holm, Y.F. Han and X.S. Xie

Pages:

3635-3640

Citation:

Q. He et al., "Improvement of Adhesion of Cubic Boron Nitride Films: Effect of Interlayer and Deposition Parameters", Materials Science Forum, Vols. 475-479, pp. 3635-3640, 2005

Online since:

January 2005

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$38.00

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