Studies on the Heterostructure of Fe Film on Si Substrate

Abstract:

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Fe films have been grown on different oriented Si substrates by metal organic chemical vapor deposition (MOCVD), and then samples are put in the air without any protection for nearly fifteen years. In this paper, using methods such as X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and vibrating sample magnetometer (VSM), we make a detailed research on the samples. We identify the composition and structure of the epitaxial films on different oriented substrates and compare the difference both in composition and magnetic properties. Different orientation of the substrates results in different epitaxial film with different characteristic. We also confirm the existence of single crystal iron in the heteroepitaxial film grown on Si (001), and discuss the possible reason why the single crystal iron film still exists without complete oxidation in air for such a long time.

Info:

Periodical:

Materials Science Forum (Volumes 475-479)

Main Theme:

Edited by:

Z.Y. Zhong, H. Saka, T.H. Kim, E.A. Holm, Y.F. Han and X.S. Xie

Pages:

3753-3756

DOI:

10.4028/www.scientific.net/MSF.475-479.3753

Citation:

Y.F. Ge et al., "Studies on the Heterostructure of Fe Film on Si Substrate", Materials Science Forum, Vols. 475-479, pp. 3753-3756, 2005

Online since:

January 2005

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Price:

$35.00

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