Microstructure and Electronic Properties of Al/Zr/LiNbO3 Multilayers

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To obtain both high power durability and fine-dimensional control in high-frequency surface acoustic wave devices, a highly oriented (111) texture was developed in electronic beam evaporated Al films on Zr underlayer. In this paper, the effects of Zr underlayer on the microstructure and resistivity of Al/Zr/LiNbO3 films were investigated. The films show an extremely smooth surface. The optimum annealing temperature is 200 °C to obtain low resistivity. For Al films with Zr underlayer, reactive ion etching with gases containing BCl3 can be more easily performed than that for Al films with Cu underlayer.

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Periodical:

Materials Science Forum (Volumes 475-479)

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Edited by:

Z.Y. Zhong, H. Saka, T.H. Kim, E.A. Holm, Y.F. Han and X.S. Xie

Pages:

3775-3778

Citation:

D.M. Li et al., "Microstructure and Electronic Properties of Al/Zr/LiNbO3 Multilayers", Materials Science Forum, Vols. 475-479, pp. 3775-3778, 2005

Online since:

January 2005

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$38.00

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