Microstructure and Electronic Properties of Al/Zr/LiNbO3 Multilayers
To obtain both high power durability and fine-dimensional control in high-frequency surface acoustic wave devices, a highly oriented (111) texture was developed in electronic beam evaporated Al films on Zr underlayer. In this paper, the effects of Zr underlayer on the microstructure and resistivity of Al/Zr/LiNbO3 films were investigated. The films show an extremely smooth surface. The optimum annealing temperature is 200 °C to obtain low resistivity. For Al films with Zr underlayer, reactive ion etching with gases containing BCl3 can be more easily performed than that for Al films with Cu underlayer.
Z.Y. Zhong, H. Saka, T.H. Kim, E.A. Holm, Y.F. Han and X.S. Xie
D.M. Li et al., "Microstructure and Electronic Properties of Al/Zr/LiNbO3 Multilayers", Materials Science Forum, Vols. 475-479, pp. 3775-3778, 2005