Effects of Heat Treatment on Microstructure of Sputter Deposited TiNiPd Film on Si Wafer


Article Preview

Amorphous thin Films of Ti51.78 Ni22.24Pd25.98 alloys were deposited onto 2 inch diameter n-type (100)Si wafer by r.f. magnetron sputtering. The crystallization temperature from an amorphous state to crystallization of free-standing thin film was found to be 553.1oC, but that of non-free-standing thin film on Si wafer was found to be higher from X-ray diffraction experiment. The film heated 1 h at 550 oC was partly crystallized but at 650 oC was almost whole crystallized. The film heated 1 h at 750 oC quite crystallized and some precipitation appear. Heated 50 h at 450 oC before crystallization the films would be accelerate B19' but restrain B19 formation in succeeding heat-treatment.



Materials Science Forum (Volumes 475-479)

Main Theme:

Edited by:

Z.Y. Zhong, H. Saka, T.H. Kim, E.A. Holm, Y.F. Han and X.S. Xie




S. Q. Qian and J. S. Wu, "Effects of Heat Treatment on Microstructure of Sputter Deposited TiNiPd Film on Si Wafer", Materials Science Forum, Vols. 475-479, pp. 3819-3822, 2005

Online since:

January 2005




[1] N.M. Matveeva, Yu.K. Kovneristyi, A.S. Savinov, V.P. Sivokha and V. N Khachin: J. Physique. Vol. 43(C4) (1982), p.249.

DOI: https://doi.org/10.1051/jphyscol:1982433

[2] Y.C. Lo and S. K Wu: Scripta Metall. Mater. Vol. 27 (1992), p.1097.

[3] Q.C. Tian and J.S. Wu: Z. Metakd, Vol. 5 (2001), p.436.

[4] S. Mathews, J. Li; Q. Su, M. Wuttig: Phil. Mag. Lett. Vol. 79 (1999), p.265.

[5] S. Miyazaki and A. Ishida: Mat. Sci. Eng. Vol. A273-275 (1999), p.106.

[6] A. Ohta, S. Bhansali, I. Kishimoto and A. Umeda: Sensors and Actuators, Vol. 86 (2000), p.165.

[7] Q.C. Tian and J.S. Wu: Acta Metall. Sinica, Vol. 14 (2001), p.319.

Fetching data from Crossref.
This may take some time to load.