Effects of Heat Treatment on Microstructure of Sputter Deposited TiNiPd Film on Si Wafer

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Amorphous thin Films of Ti51.78 Ni22.24Pd25.98 alloys were deposited onto 2 inch diameter n-type (100)Si wafer by r.f. magnetron sputtering. The crystallization temperature from an amorphous state to crystallization of free-standing thin film was found to be 553.1oC, but that of non-free-standing thin film on Si wafer was found to be higher from X-ray diffraction experiment. The film heated 1 h at 550 oC was partly crystallized but at 650 oC was almost whole crystallized. The film heated 1 h at 750 oC quite crystallized and some precipitation appear. Heated 50 h at 450 oC before crystallization the films would be accelerate B19' but restrain B19 formation in succeeding heat-treatment.

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Periodical:

Materials Science Forum (Volumes 475-479)

Main Theme:

Edited by:

Z.Y. Zhong, H. Saka, T.H. Kim, E.A. Holm, Y.F. Han and X.S. Xie

Pages:

3819-3822

Citation:

S. Q. Qian and J. S. Wu, "Effects of Heat Treatment on Microstructure of Sputter Deposited TiNiPd Film on Si Wafer", Materials Science Forum, Vols. 475-479, pp. 3819-3822, 2005

Online since:

January 2005

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$38.00

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