The Size Range of Volume Change of Melting


Article Preview

Through considering the packing density and the lattice contraction, volume changes of elements with different structures DV on melting are modeled. An agreement between the model predictions and the experimental as well as theoretical data is found. Moreover, the alloy design principle for GFA of bulk metallic glasses (BMG) based on the size of DV is also suggested that amorphous metallic alloys will have the best GFA when its packing density approaches that of A2 crystal.



Materials Science Forum (Volumes 475-479)

Main Theme:

Edited by:

Z.Y. Zhong, H. Saka, T.H. Kim, E.A. Holm, Y.F. Han and X.S. Xie




H.M. Lu and Q. Jiang, "The Size Range of Volume Change of Melting", Materials Science Forum, Vols. 475-479, pp. 603-606, 2005

Online since:

January 2005





[1] A.R. Ubbelohde: Melting and Crystal Structure (Clarendon Press, Oxford, 1965).

[2] A.R. Ubbelohde: The Molten State of Matter: Melting and Crystal Structure (John Wiley, Chichester, 1978).

[3] T. Egami: Mat. Sci. Eng. A Vol 226-228 (1997), p.261.

[4] G.D. Scott and D.M. Kilgour: J. Phys. D Vol 2 (1969), p.863.

[5] J.L. Finney: Proc. R. Soc. A Vol 319 (1970), p.479.

[6] C.H. O'Hern, L.E. Silbert, A.J. Liu and S.R. Nagel: Phys. Rev. E Vol 68 (2003), pp.011306-1.

[7] C.Q. Sun, S. Li, B.K. Tay and T.P. Chen: Acta. Mater. Vol 50 (2002), p.4687.

[8] A.S. Clarke and J.D. Wiley: Phys. Rev. B Vol 35 (1987), p.7350.

[9] H.W. King: Physical Metallurgy 3rd, R.W. Cahn and P. Haasen (eds. ) (North-Holland, Amsterdam, 1983).

[10] A.V. Tkachenko and T.A. Witten: Phys. Rev. E Vol 60 (1999), p.687.

[11] N. Jakse and A. Pasturel: Phys. Rev. Lett. Vol 91 (2003), p.195501.

[12] American Society for Metals: Metals Handbook 9 th (Machine Press, Beijing, 1979)(Chinese version).

[13] R.W.G. Wyckoff: Crystal Structures (Interscience Publishers, New York, 1948).

[14] F. Boakye, K.G. Adanu and R.K. Nkum: Acta. Mater. Vol 49 (2001), p. (2095).

[15] S.V. Stankus and R.A. Khairulin: J. Alloy. Compd. Vol 297 (2000), p.30.

[16] T.D. Shen, U. Harms and R.B. Schwarz: Appl. Phys. Lett. Vol 82 (2003), pp.4512-8 ∆V/VS (%) Atomic number Sb Sn Ga Mn Si In Bi.