Manufacture of Al/SiC Composites by Pressure Infiltration Process

Abstract:

Article Preview

The SiCp performing sample was made first then Al/SiCp (65%) was manufactured. Appropriate component and proportion of binder and process parameters were selected to control the porosity. Debinding has succeeded by extractive and thermal debinding processes. SiCp preforming samples with good appearance, enough strength, and right porosity were obtained by pre-sintering process at 1100°C. Composites with high density and homogeneous microstructure were manufactured by pressure infiltration under 1050°C and 15MPa. The distribution of aluminium and silicon elements was homogeneous. The primary components of materials are aluminium, β-SiC and α-SiC. The thermal expand coefficient of composites is 8.0×10-6/°C at room temperature, which increases with temperature and reaches to 11.0×10-6/°C at 300°C. The density is 2.92g/cm3, and relative density is more than 97 %. The strength is about 500MPa, approaching to the upper limit of the theoretical value.

Info:

Periodical:

Materials Science Forum (Volumes 475-479)

Main Theme:

Edited by:

Z.Y. Zhong, H. Saka, T.H. Kim, E.A. Holm, Y.F. Han and X.S. Xie

Pages:

913-916

DOI:

10.4028/www.scientific.net/MSF.475-479.913

Citation:

F. Z. Yin et al., "Manufacture of Al/SiC Composites by Pressure Infiltration Process", Materials Science Forum, Vols. 475-479, pp. 913-916, 2005

Online since:

January 2005

Export:

Price:

$35.00

[1] E. Parras-Medecigo, M. I. Pech-Canul, A. Gorokhovsky et al.: Materials Letters. 56(2002), p.460.

DOI: 10.1016/s0167-577x(02)00528-1

[2] M. K. Aghajanian, M. A. Rocazella, J. T. Burke et al.: J Mat. Sci. 26(1991), p.447.

[3] M. E. Smagorinsk, P. G. Tsantrizos, S. Grenier et al.: Mat. Sci. and Eng. A244(1998), p.86.

[4] Gu Mingyuan, Mei Zhi, Jin Yanping et al.: Scripta Materialia. 40-9(1999), p.985.

DOI: 10.1016/s1359-6462(99)00006-8

[5] J. Hashim, L. Looney, M.S.J. Hashmi: J. Mat. Pro. Tec. 119(2001), p.329.

[6] Young-Ho Seo, Chung-Gil Kang: J. Mat. Pro. Tec. 55(1995), p.370.

[7] Hyo S. Lee, Kyung Y. Jeon et al.: J. Mat. Sci. 35(2000), p.6231.

In order to see related information, you need to Login.