Study of Donor Centres in n-InSb due to the Temperature Annealing
An increasing of donor centres has been detected in n-InSb when it was submitted to anneal/quench with various annealing temperature (450 °C - 850 °C) and various annealing time (5 - 100 hours). A theoretical study of the kinetics of the conduction conversion of n-InSb at temperature annealing above 250 °C has been made. The present analysis indicates that the donor concentration increases with increasing of annealing time. In order to study this variation and to give a model for donor centres generated, a proposed model based on the simple kinetic is used to fit the variation of donor concentration as a function of annealing time. However, from the best fit of experimental data using the proposed model, the activation energy is determined.
Y. Sayad and A. Nouiri, "Study of Donor Centres in n-InSb due to the Temperature Annealing", Materials Science Forum, Vols. 480-481, pp. 197-200, 2005