Study of Donor Centres in n-InSb due to the Temperature Annealing

Abstract:

Article Preview

An increasing of donor centres has been detected in n-InSb when it was submitted to anneal/quench with various annealing temperature (450 °C - 850 °C) and various annealing time (5 - 100 hours). A theoretical study of the kinetics of the conduction conversion of n-InSb at temperature annealing above 250 °C has been made. The present analysis indicates that the donor concentration increases with increasing of annealing time. In order to study this variation and to give a model for donor centres generated, a proposed model based on the simple kinetic is used to fit the variation of donor concentration as a function of annealing time. However, from the best fit of experimental data using the proposed model, the activation energy is determined.

Info:

Periodical:

Materials Science Forum (Volumes 480-481)

Edited by:

A. Méndez-Vilas

Pages:

197-200

Citation:

Y. Sayad and A. Nouiri, "Study of Donor Centres in n-InSb due to the Temperature Annealing", Materials Science Forum, Vols. 480-481, pp. 197-200, 2005

Online since:

March 2005

Authors:

Export:

Price:

$38.00

[1] P. Baranski, V. Klotchkov, I. Potykevitch, Electronique des semiconducteurs Editions Mir (1987).

[2] H. Finkenrath et al, Z. F. Angewandte Phys., 30, 6, (1966)461.

[3] J. R. Dixon, D. L. Enright, J. Appl. Phys. 30, (1959)753.

[4] Y. Sayad, Thesis, Constantine University (2003).

[5] A. Nouiri, Y. Sayad, et A. Djemel, phys. stat. sol. (c) 0, 2, (2003) 665.

[6] A. Nouiri, thesis, Constantine University (1993).