Study of Donor Centres in n-InSb due to the Temperature Annealing

Abstract:

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An increasing of donor centres has been detected in n-InSb when it was submitted to anneal/quench with various annealing temperature (450 °C - 850 °C) and various annealing time (5 - 100 hours). A theoretical study of the kinetics of the conduction conversion of n-InSb at temperature annealing above 250 °C has been made. The present analysis indicates that the donor concentration increases with increasing of annealing time. In order to study this variation and to give a model for donor centres generated, a proposed model based on the simple kinetic is used to fit the variation of donor concentration as a function of annealing time. However, from the best fit of experimental data using the proposed model, the activation energy is determined.

Info:

Periodical:

Materials Science Forum (Volumes 480-481)

Edited by:

A. Méndez-Vilas

Pages:

197-200

DOI:

10.4028/www.scientific.net/MSF.480-481.197

Citation:

Y. Sayad and A. Nouiri, "Study of Donor Centres in n-InSb due to the Temperature Annealing", Materials Science Forum, Vols. 480-481, pp. 197-200, 2005

Online since:

March 2005

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$35.00

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