Synthesis of Crystalline Carbon Nitride by Microwave Plasma Chemical Vapor Deposition

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Carbon nitride films were grown on Si substrates by a microwave plasma chemical vapor deposition method, using mixture of N2, CH4 and H2 as precursor. Scanning electron microscopy shows that the films consisted of a large number of hexagonal crystallites. The dimension of the largest crystallite is about 3 µm. The X-ray photoelectron spectroscopy suggests that nitrogen and carbon in the films are bonded through hybridized sp2 and sp3 configurations. The X-ray diffraction pattern indicates that the major part of the films is composed of α-, β-, pseudocubic C3N4 and graphitic C3N4. The Raman peaks match well with the calculated Raman frequencies of α- and β-C3N4, revealing the formation of the α- and β-C3N4 phase.

Info:

Periodical:

Materials Science Forum (Volumes 480-481)

Edited by:

A. Méndez-Vilas

Pages:

71-76

DOI:

10.4028/www.scientific.net/MSF.480-481.71

Citation:

J. C. Jiang et al., "Synthesis of Crystalline Carbon Nitride by Microwave Plasma Chemical Vapor Deposition", Materials Science Forum, Vols. 480-481, pp. 71-76, 2005

Online since:

March 2005

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$35.00

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