Near-Field Study of Carrier Dynamics in InAs/GaAs Quantum Dots Grown on InGaAs Layers


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InAs/GaAs quantum dots (QDs) with ordered structure, due to their peculiar properties, open new way to design novel semiconductor devices such as single-electron transistors or highly parallel computing architectures. The lateral quantum dot alignment achieved during the selfassembly process is not well understood heretofore. The reason is, that quantum structures areusually small and studied at low temperatures. Conversely, the Scanning near-field optical microscopy (SNOM) allows study nanometer details in the non-offensive manner, in the room temperature with high spatial and temporal resolution. The first results of near-field optical study on aligned QDs are presented.



Edited by:

Jaroslav Pokluda




P. Tománek et al., "Near-Field Study of Carrier Dynamics in InAs/GaAs Quantum Dots Grown on InGaAs Layers", Materials Science Forum, Vol. 482, pp. 151-154, 2005

Online since:

April 2005




[1] Ch. P. Poolle, Jr. and F. J. Owens: Introduction to Nanotechnology (Willey, USA, 2003).

[2] M. Telford: III-Vs Review, Vol. 17, No. 3 (2004), p.28.

[3] D. Courjon and C. Bainier: Le champs proche optique (Springer, France, 2001).

[4] P. Tománek, M. Benešová, P. Dobis, D. Košťálová, L. Grmela and S. Kawata: Phys. Low- Dim. Struct., Vol. 3-4 (2003), p.131.

[5] P. Tománek, M. Benešová, D. Košťálová, and P. Létal: SPIE Proc., Vol. 4607 (2002), p.168.

[6] C. Walther, J. Bollmann, H. Kissel, H. Kirmse, W. Neumann, and W. T. Masselink, Physica B, (1999), Vol. 273-274, p.971.