High Temperature Hydrocarbon Sensing with Pt-Thin Ga2O3-SiC Diodes


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Silicon carbide based metal-oxide-semiconductor (MOS) devices are attractive for gas sensing in harsh, high temperature environments. We present a hydrocarbon gas sensor based on a Pt–thin Ga2O3–SiC device. This sensor has been employed as a Schottky diode, and is capable of operating at temperatures around 600°C. Exposure to propene (C3H6) gas results in shift towards lower voltages in the current-voltage (I-V) characteristic curve, as well as a change in series resistance of the diode. The Ga2O3 thin films were prepared by the sol-gel process and deposited onto the SiC by spin coating. The Pt layer was deposited on the top of the Ga2O3, forming the Schottky contact. It also serves to dehydrogenate the hydrocarbons. The sensors responses were stable and repeatable towards propene at operating temperatures between 300 and 600°C. In this paper the effect of biasing is investigated by analyzing the output voltage of the diodes when biased at different constant currents.



Materials Science Forum (Volumes 483-485)

Edited by:

Dr. Roberta Nipoti, Antonella Poggi and Andrea Scorzoni




A. Trinchi et al., "High Temperature Hydrocarbon Sensing with Pt-Thin Ga2O3-SiC Diodes", Materials Science Forum, Vols. 483-485, pp. 1033-1036, 2005

Online since:

May 2005




[1] G. Müller, G. Krötz, Sens. Actuators A, Vol. 43 (1994), p.259.

[2] A. Lloyd Spetz, A. Baranzahi, P. Tobias, and I. Lundström: Phys. Status Solidi A, Vol. 162 (1997), p.493.

[3] G. Krötz, M.H. Eickhoff, G. Müller, Sens. Actuators A: Vol. 74 (1999), p.182.

[4] J. B. Casady, R. W. Johnson, Solid-State Electron: Vol. 39 (1996), p.1409.

[5] M. Fleischer and H. Meixner, Sens. Actuators B: Vol. 6 (1992), p.257.

[6] M. Fleischer and H. Meixner, Sens. Actuators B: Vol. 26 (1995), p.81.

[7] A. Trinchi, W. Wlodarski and Y. X. Li: Proceedings of 2nd IEEE Sensors Conference, Toronto, Canada, (2003), p.133.

[8] A. Trinchi, K. Galatsis, W. Wlodarski and Y. X. Li: IEEE Sens. J: Vol. 3 (2003), p.548.

[9] A. Trinchi, S. Kaciulis, L. Pandolfi, M.K. Ghantasala, S. Viticoli, Y. . Li, W. Wlodarski, E. Comini and G. Sberveglieri, Sens. Actuators B: Vol. 103 (2004), p.129.

DOI: https://doi.org/10.1016/j.snb.2004.04.112

[10] R.E. Kirk, D.S. Othmer, Encyclopaedia of Chemical Technology, 4th Edition (John Wiley & Sons, USA 1995).

[11] P. W. Atkins, Physical Chemistry 6th Edition (Freeman, USA 1999).