Experimental Investigation and Simulation of Silicon Droplets Formation during SiC CVD Epitaxial Growth

Abstract:

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Mechanisms and consequences of silicon vapor condensation during SiC epitaxial growth or implant annealing with silane overpressure were investigated. The model for the silicon liquid droplets formation in the gas phase and their deposition on the surface of the SiC substrate was developed. The droplet formation dependence on the silane flow rate, temperature profile in the reactor, and the local temperature variations introduced by the wafer carrier and SiC substrate were investigated.

Info:

Periodical:

Materials Science Forum (Volumes 483-485)

Edited by:

Roberta Nipoti, Antonella Poggi and Andrea Scorzoni

Pages:

105-108

DOI:

10.4028/www.scientific.net/MSF.483-485.105

Citation:

G. Melnychuck et al., "Experimental Investigation and Simulation of Silicon Droplets Formation during SiC CVD Epitaxial Growth", Materials Science Forum, Vols. 483-485, pp. 105-108, 2005

Online since:

May 2005

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Price:

$35.00

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