High Temperature Contacts to GaN and SiC Based on TiBx Nanostructure Layers

Abstract:

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In this communication we present the results of study of new contact systems to GaN epitaxial layers grown on sapphire and n-type 6H-SiC monocrystals. The TiBx nanostructure phase has been used during manufacturing Ti – Al – TiBx – Au and TiBx contact systems. The n-GaN epitaxial layers of 1 µm thickness were grown on [0001] sapphire substrate by vapor-phase epitaxy. The n-type 6H-SiC monocrystals were grown by Lely method with the donor concentration of 2x1018 cm3. The layers of Ti, Al, TiBx and Au were deposited by magnetron sputtering followed by high-temperature annealing.

Info:

Periodical:

Materials Science Forum (Volumes 483-485)

Edited by:

Roberta Nipoti, Antonella Poggi and Andrea Scorzoni

Pages:

1061-1064

DOI:

10.4028/www.scientific.net/MSF.483-485.1061

Citation:

M. S. Boltovets et al., "High Temperature Contacts to GaN and SiC Based on TiBx Nanostructure Layers", Materials Science Forum, Vols. 483-485, pp. 1061-1064, 2005

Online since:

May 2005

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$35.00

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