Evaluation of p-Type Doping for (1,1,-2,0) Epitaxial Layers Grown on α-Cut (1,1,-2,0) 4H-SiC Substrates
We report an experimental investigation of the residual (n-type) and intentional (p-type) doping level of <11-20> epitaxial layers grown on a-cut 4H-SiC substrates. Using SIMS, C(V) measurements, low temperature photoluminescence and Hall effect investigations, we show that nitrogen incorporates 3 times more than usually found for <0001> surfaces. Conversely, aluminum incorporates 8 times less. Altogether, this is in excellent agreement with previous results from stepcontrolled epitaxy.
Roberta Nipoti, Antonella Poggi and Andrea Scorzoni
C. Blanc et al., "Evaluation of p-Type Doping for (1,1,-2,0) Epitaxial Layers Grown on α-Cut (1,1,-2,0) 4H-SiC Substrates", Materials Science Forum, Vols. 483-485, pp. 117-120, 2005