Epitaxial Growth of n-Type 4H-SiC on 3" Wafers for Power Devices

Abstract:

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In this paper we present recent results of epitaxial growth of 4H-SiC on 3” (0001) 8° and 4° off-oriented wafers using a multi-wafer hot-wall CVD system. This equipment exhibits a capacity of 5x3” or 7x2” wafers per run. By optimizing the process conditions epitaxial layers with excellent crystal quality, purity and homogeneity in doping and thickness were grown. The intra-wafer as well as the wafer-to-wafer homogeneity will be illustrated by doping and thickness mappings of a full-loaded run. Surface morphology of epitaxial layers on 8° and 4° off-oriented wafers was investigated by atomic force microscopy.

Info:

Periodical:

Materials Science Forum (Volumes 483-485)

Edited by:

Roberta Nipoti, Antonella Poggi and Andrea Scorzoni

Pages:

141-146

DOI:

10.4028/www.scientific.net/MSF.483-485.141

Citation:

B. Thomas and C. Hecht, "Epitaxial Growth of n-Type 4H-SiC on 3" Wafers for Power Devices", Materials Science Forum, Vols. 483-485, pp. 141-146, 2005

Online since:

May 2005

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$35.00

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