Epitaxial Growth of n-Type 4H-SiC on 3" Wafers for Power Devices
In this paper we present recent results of epitaxial growth of 4H-SiC on 3” (0001) 8° and 4° off-oriented wafers using a multi-wafer hot-wall CVD system. This equipment exhibits a capacity of 5x3” or 7x2” wafers per run. By optimizing the process conditions epitaxial layers with excellent crystal quality, purity and homogeneity in doping and thickness were grown. The intra-wafer as well as the wafer-to-wafer homogeneity will be illustrated by doping and thickness mappings of a full-loaded run. Surface morphology of epitaxial layers on 8° and 4° off-oriented wafers was investigated by atomic force microscopy.
Dr. Roberta Nipoti, Antonella Poggi and Andrea Scorzoni
B. Thomas and C. Hecht, "Epitaxial Growth of n-Type 4H-SiC on 3" Wafers for Power Devices", Materials Science Forum, Vols. 483-485, pp. 141-146, 2005