Development of Epitaxial SiC Processes Suitable for Bipolar Power Devices

Abstract:

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We present a survey of the most important factors relating to an epitaxial SiC growth process that is suitable for bipolar power devices. During the last several years, we have advanced our hot-wall SiC epitaxial growth technology to the point that we can support the transition of bipolar power devices from demonstrations to applications. Two major concerns in developing a suitable epitaxial technology are epilayer uniformity and extended defect density. Our state-of-theart capability permits the realization of 1-cm2 area devices with exceptional yields. Another major concern is the stability of bipolar devices during forward conduction. We have developed proprietary substrate and epilayer preparation technologies that have essentially eliminated Vf drift as a significant barrier to the exploitation of SiC based bipolar devices.

Info:

Periodical:

Materials Science Forum (Volumes 483-485)

Edited by:

Roberta Nipoti, Antonella Poggi and Andrea Scorzoni

Pages:

155-158

DOI:

10.4028/www.scientific.net/MSF.483-485.155

Citation:

J. J. Sumakeris et al., "Development of Epitaxial SiC Processes Suitable for Bipolar Power Devices", Materials Science Forum, Vols. 483-485, pp. 155-158, 2005

Online since:

May 2005

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Price:

$35.00

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