Computer Simulation of the Early Stages of Nano Scale SiC Growth on Si

Abstract:

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Solid source molecular beam epitaxy was applied to create silicon carbide nanoclusters on silicon. The island size distribution can be controlled by an appropriate substrate temperature, carbon fluxes and process times. Rate equation computer simulation was applied to simulate the experimental obtained nano scale nuclei properties.

Info:

Periodical:

Materials Science Forum (Volumes 483-485)

Edited by:

Roberta Nipoti, Antonella Poggi and Andrea Scorzoni

Pages:

169-172

DOI:

10.4028/www.scientific.net/MSF.483-485.169

Citation:

K.L. Safonov et al., "Computer Simulation of the Early Stages of Nano Scale SiC Growth on Si", Materials Science Forum, Vols. 483-485, pp. 169-172, 2005

Online since:

May 2005

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Price:

$35.00

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