Planar Defects, Voids and their Relationship in 3C-SiC Layers

Abstract:

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One of the problems with Si(001)/3C-SiC templates is that they involve highly defective interfaces due to the presence of misfit dislocations, voids and planar defects that degrade the SiC layer quality. A way to accommodate the high lattice mismatch between these materials and reduce the voids density is to carbonize the Si substrate before the epitaxial growth. In this contribution an alternative way to reduce planar defects density is presented by analyzing the relationship between planar defects and voids. Planar view and cross section transmission electron microscopy micrographs show a diminution of planar defects in the regions surrounding the voids. Due to the lower elastic energy over the voids and/or to a lateral growth in these regions, the generation of planar defects is partially deactivated, improving locally the crystalline quality of the SiC layer. The introduction of such cavities can be thus seen as a new parameter of Si/SiC templates design.

Info:

Periodical:

Materials Science Forum (Volumes 483-485)

Edited by:

Roberta Nipoti, Antonella Poggi and Andrea Scorzoni

Pages:

189-192

DOI:

10.4028/www.scientific.net/MSF.483-485.189

Citation:

D. Méndez et al., "Planar Defects, Voids and their Relationship in 3C-SiC Layers", Materials Science Forum, Vols. 483-485, pp. 189-192, 2005

Online since:

May 2005

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Price:

$35.00

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