Regrowth of 3C-SiC on CMP Treated 3C-SiC/Si Epitaxial Layers

Abstract:

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In this work, we have investigated the 3C-SiC re-growth on planarized 3C-SiC epitaxial layers, grown on (001)Si, after the application of a chemical mechanical polishing (CMP) process. A specific polishing process was developed for 3C-SiC to achieve a flat, high-quality surface. The interface between the deposited 3C-SiC and the polished 3C-SiC on Si film was studied by TEM characterization to determine if defects appear at this interface. It was observed that no additional defects were nucleated at the interface. The resulting re-grown film roughness, as a function of film thickness, was studied and is reported along with recommendations for future work.

Info:

Periodical:

Materials Science Forum (Volumes 483-485)

Edited by:

Dr. Roberta Nipoti, Antonella Poggi and Andrea Scorzoni

Pages:

197-200

DOI:

10.4028/www.scientific.net/MSF.483-485.197

Citation:

H. Mank et al., "Regrowth of 3C-SiC on CMP Treated 3C-SiC/Si Epitaxial Layers", Materials Science Forum, Vols. 483-485, pp. 197-200, 2005

Online since:

May 2005

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Price:

$35.00

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