Low Temperature Chemical Vapor Deposition of 3C-SiC on Si Substrates
In the present work an UHVCVD method was developed which allows the epitaxial growth of 3C-SiC on Si substrates at temperatures below 1000°C. The developed method enable the growth of low stress or nearly stress free single crystalline 3C-SiC layers on Si. The influence of hydrogen on the growth process are be discussed. The structural properties of the 3C-SiC(100) layers were studied with reflection high-energy diffraction, atomic force microscopy, X-ray diffraction and the layer thickness were measured by reflectometry as well as visible ellipsometry. The tensile strain reduction at optimized growth temperature, Si/C ratio in the gas phase and deposition rate are demonstrated by the observation of freestanding SiC cantilevers.
Roberta Nipoti, Antonella Poggi and Andrea Scorzoni
C. Förster et al., "Low Temperature Chemical Vapor Deposition of 3C-SiC on Si Substrates", Materials Science Forum, Vols. 483-485, pp. 201-204, 2005