Microstructures in the Pendeo Epitaxial Layer of 3C-SiC on Si Substrate
The pendeo epitaxial growth has been applied for the growth of 3C-SiC on (001) Si substrates. This growth was performed by VPE using hexamethyldisilane (HMDS) as a source gas. To characterize the crystallinity of the seed 3C-SiC and the pendeo epitaxial layer, the high resolution transmission electron microscopic (HRTEM) analysis was carried out. In the vertically grown layer on the seed 3C-SiC, the high-defect-density regions were observed. On the contrary, the low-defect-density regions were observed in the laterally grown layer. It was revealed from the TEM observations that lattice information can be transferred through the seed 3C-SiC while defects can be prevented from propagating into the epitaxial layer due to the presence of the air gap.
Dr. Roberta Nipoti, Antonella Poggi and Andrea Scorzoni
A. Shoji et al., "Microstructures in the Pendeo Epitaxial Layer of 3C-SiC on Si Substrate", Materials Science Forum, Vols. 483-485, pp. 221-224, 2005