Microfabrication of Si Column Covered with SiC Film for Electron Emitter
The selective growth of Si column was carried out by depositing Au on patterned Si (111) substrate as a solvent in chemical vapor transport method by using halides (HCl). The Si column was produced by VLS mechanism. The column was covered with SiC by conventional CVD process using HMDS ( Hexamethyldisilane ). Carbon Nano Tube ( CNT ) was deposited on Si column covered with SiC by DC assisted µ-wave plasma CVD.
Roberta Nipoti, Antonella Poggi and Andrea Scorzoni
T. Nakata et al., "Microfabrication of Si Column Covered with SiC Film for Electron Emitter", Materials Science Forum, Vols. 483-485, pp. 237-240, 2005