Microfabrication of Si Column Covered with SiC Film for Electron Emitter

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The selective growth of Si column was carried out by depositing Au on patterned Si (111) substrate as a solvent in chemical vapor transport method by using halides (HCl). The Si column was produced by VLS mechanism. The column was covered with SiC by conventional CVD process using HMDS ( Hexamethyldisilane ). Carbon Nano Tube ( CNT ) was deposited on Si column covered with SiC by DC assisted µ-wave plasma CVD.

Info:

Periodical:

Materials Science Forum (Volumes 483-485)

Edited by:

Dr. Roberta Nipoti, Antonella Poggi and Andrea Scorzoni

Pages:

237-240

Citation:

T. Nakata et al., "Microfabrication of Si Column Covered with SiC Film for Electron Emitter", Materials Science Forum, Vols. 483-485, pp. 237-240, 2005

Online since:

May 2005

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$38.00

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