Preparation of Porous 4H-SiC by Surface Anodization


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The preparation of porous 4H-SiC by electrochemical etching of SiC crystals was investigated. The porous layer was created at the porous SiC (PSC)/SiC interface but not from the SiC/electrolyte interface. The nanopores at the adjacent region of PSC/SiC interface were bigger than those at the top region. In the visible light region, the optical reflectance from PSC exhibits interference fringes. In the Reststrahlen region, the fourier transform infrared (FTIR) reflectance of porous 4H-SiC shows a splitting into more bands: a broad band with high reflectivity at low frequency and several sharp peaks near the LO frequency. The width and shape of FTIR spectra depended on the anodization current density. The anodization current density is a crucial parameter which determined the porosity, porosity depth profile, and the thickness of PSC layers. A pore transformation of porous structure was observed after chemical vapor deposition process.



Materials Science Forum (Volumes 483-485)

Edited by:

Dr. Roberta Nipoti, Antonella Poggi and Andrea Scorzoni




Y. Chen et al., "Preparation of Porous 4H-SiC by Surface Anodization", Materials Science Forum, Vols. 483-485, pp. 257-260, 2005

Online since:

May 2005




[1] M. Mynbaeva, S. e. Saddow G. Melnychuk, I. Nikitina, M. Scheglov, A. sitnikova, N. Kuznetsov, K. Mynbaev and V. Dmitriev: Appl. Phys. Lett. 78 (2001), p.117.


[2] K. H. Wu, Y. K. Fang, W. T. Hsieh, J. j. Ho, W. J. Lin and J. D. Hwang: Electron. Lett. 34 (1998), p.2243.

[3] G. Melnychuck and M. Mynbaeva, et al.: Mat. Res. Symp. Proc. 622 (2000), T4. 2. 1.

[4] S.E. Saddow and M. Mynbaeva, et al.: Mat. Sci. Form 353-356 (2001), p.115.

[5] F. Yun and M. A. Reshchikov, et al.: Appl. Phys. Lett. 81(2002), p.4142.

[6] E. J. Connolly et al. Sens. Act. A 99 (2002), p.25.

[7] A. J. Rosenbloom, Y. Shishkin, D. M. Sipe Y. Ke, R. P. Devaty and W. J. Choyke: Mat. Sci. Forum 457-460 (2004), p.1463.


[8] A M. Rossi, V. Ballarini, S. Ferrero and F. Giorgis: Mat. Sci. Forum 457-460 (2004), p.1475.

[9] Jonathan E. Spanier and Irving P. Herman: Phys. Rev. B 61(2000), p.10437.

[10] V. P. Bondarenko, A. M. Dorofeev and L V. Tabulina: Poverchnost' 10, 64 (1985) (in Russion). 300 nm SiC sub. PSC layers 300 nm SiC sub. PSC layers a b.