X-Ray Diffraction Analysis of Epigrowth on Porous 4H-SiC Substrates

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The methods of X-ray topography and diffractometry have been applied to characterize the structure of epilayers grown on porous layers. Two geometrical configurations of defects determined to be stacking faults (SF) were revealed: i) with the images of triangular shape with the edge size 560 µm along the <10-10> directions; ii) linear shape along the [11-20] direction. The sources of SFs are located within the epilayer and start from the epilayer / porous layer interface. We propose that the source of SFs is connected with graphitization of porous layer at the temperature of epitaxy.

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Periodical:

Materials Science Forum (Volumes 483-485)

Edited by:

Dr. Roberta Nipoti, Antonella Poggi and Andrea Scorzoni

Pages:

265-268

Citation:

I.L. Shulpina et al., "X-Ray Diffraction Analysis of Epigrowth on Porous 4H-SiC Substrates", Materials Science Forum, Vols. 483-485, pp. 265-268, 2005

Online since:

May 2005

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$38.00

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