X-Ray Diffraction Analysis of Epigrowth on Porous 4H-SiC Substrates
The methods of X-ray topography and diffractometry have been applied to characterize the structure of epilayers grown on porous layers. Two geometrical configurations of defects determined to be stacking faults (SF) were revealed: i) with the images of triangular shape with the edge size 560 µm along the <10-10> directions; ii) linear shape along the [11-20] direction. The sources of SFs are located within the epilayer and start from the epilayer / porous layer interface. We propose that the source of SFs is connected with graphitization of porous layer at the temperature of epitaxy.
Dr. Roberta Nipoti, Antonella Poggi and Andrea Scorzoni
I.L. Shulpina et al., "X-Ray Diffraction Analysis of Epigrowth on Porous 4H-SiC Substrates", Materials Science Forum, Vols. 483-485, pp. 265-268, 2005