On Current Limitations in Porous SiC Applications


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Thermal stability of porous SiC (PSC) with nano-, micro- and double-layer porous structure is assessed through annealing the material at T=900–1700 0C in vacuum and Ar. Changes in composition of PSC under thermal treatment are correlated with porous structure modification. Limitations in PSC technology and applications due to compositional and structure evolution at high temperatures are discussed.



Materials Science Forum (Volumes 483-485)

Edited by:

Dr. Roberta Nipoti, Antonella Poggi and Andrea Scorzoni




M. G. Mynbaeva et al., "On Current Limitations in Porous SiC Applications", Materials Science Forum, Vols. 483-485, pp. 269-272, 2005

Online since:

May 2005




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