PVT-Growth and Characterization of Single Crystalline 3C-SiC on a (0001) 6H-SiC Substrate
The aim of the present work is to grow 3C-SiC on (0001) 6H-SiC seeds using the Physical Vapour Transport (PVT) method and to study the electrical and structural properties of the grown material. Photoluminescence (PL)-mappings reveal that the overgrown layer consists predominantly of the 3C-SiC polytype and capacitance-voltage (C-V) measurements result in a net nitrogen donor concentration of 1x1016cm-3. Transmission Electron Microscopy (TEM) observations also confirm that the overgrown layer is of the 3C-SiC polytype having the cubic  crystallographic direction parallel to the c-axis of the 6H-SiC substrate. In some cases, twin crystals of 3C-SiC are formed immediately after the interface and, in a few cases, small 6H-SiC inclusions are observed in the cubic film having the same orientation as the substrate. The film near the substrate/overgrown interface shows a high density of defects such as dislocations and stacking faults (SF’s), which propagate into the overgrown layer. Finally although there is a rapid decrease of the defect density within the first 60 µm from the interface, the SF density remains almost constant within the last 100 µm below the surface.
Roberta Nipoti, Antonella Poggi and Andrea Scorzoni
E. K. Polychroniadis et al., "PVT-Growth and Characterization of Single Crystalline 3C-SiC on a (0001) 6H-SiC Substrate", Materials Science Forum, Vols. 483-485, pp. 319-322, 2005