Electronic Levels Induced by Irradiation in 4H-Silicon Carbide
The effects of irradiation with protons and electrons on 4H-silicon carbide epilayers were investigated. The particle energy was 6.5 and 8.2 MeV. The electronic levels associated with the irradiation-induced defects were analyzed by current-voltage characteristics and deep level transient spectroscopy measurements up to 700 K. In the same temperature range the apparent free carrier concentration was measured by capacitance-voltage characteristics to monitor possible compensation effects due to the deep level associated to the induced defects. Introduction rate, enthalpy and capture cross-section of such deep levels were compared and some conclusions about the nature of the defects were drawn.
Roberta Nipoti, Antonella Poggi and Andrea Scorzoni
A. Castaldini et al., "Electronic Levels Induced by Irradiation in 4H-Silicon Carbide", Materials Science Forum, Vols. 483-485, pp. 359-364, 2005