Comparative Study of 4H-SiC Irradiated with Neutrons and Heavy Ions
The influence of the irradiation with neutrons, Kr+ (245 MeV) and Bi+ (710 MeV) ions on the optical and electrical properties of high-resistivity, high-purity 4H-SiC epitaxial layers grown by chemical vapor deposition was investigated using photoluminescence and deep-level transient spectroscopy. Electrical characteristics were studied using Al and Cr Schottky barriers as well as p+-n-n+ diodes fabricated by Al ion implantation on this epitaxial layers. It was found that both "light" neutrons and high energy heavy ions introduced identical defect centers in 4H-SiC. So, even at extremely high density of the ionization energy of 34 keV/nm, typical for Bi+ ion bombardment, damage structure formation in SiC single crystal is governed by energy loss in elastic collisions.
Dr. Roberta Nipoti, Antonella Poggi and Andrea Scorzoni
E. V. Kalinina et al., "Comparative Study of 4H-SiC Irradiated with Neutrons and Heavy Ions", Materials Science Forum, Vols. 483-485, pp. 377-380, 2005