Comparative Study of 4H-SiC Irradiated with Neutrons and Heavy Ions

Abstract:

Article Preview

The influence of the irradiation with neutrons, Kr+ (245 MeV) and Bi+ (710 MeV) ions on the optical and electrical properties of high-resistivity, high-purity 4H-SiC epitaxial layers grown by chemical vapor deposition was investigated using photoluminescence and deep-level transient spectroscopy. Electrical characteristics were studied using Al and Cr Schottky barriers as well as p+-n-n+ diodes fabricated by Al ion implantation on this epitaxial layers. It was found that both "light" neutrons and high energy heavy ions introduced identical defect centers in 4H-SiC. So, even at extremely high density of the ionization energy of 34 keV/nm, typical for Bi+ ion bombardment, damage structure formation in SiC single crystal is governed by energy loss in elastic collisions.

Info:

Periodical:

Materials Science Forum (Volumes 483-485)

Edited by:

Dr. Roberta Nipoti, Antonella Poggi and Andrea Scorzoni

Pages:

377-380

Citation:

E. V. Kalinina et al., "Comparative Study of 4H-SiC Irradiated with Neutrons and Heavy Ions", Materials Science Forum, Vols. 483-485, pp. 377-380, 2005

Online since:

May 2005

Export:

Price:

$38.00

[1] T. Dalibor, G. Pensl, H. Matsunami, T. Kimoto, W.J. Choyke, A. Schoner, N. Nordel: Phys. St. Sol. (a) Vol. 162, (1997), p.199.

[2] V.S. Balandovich, G.N. Violina: Cryst. Lattice Defects Amorph. Mater. Vol. 13, (1987), p.189.

[3] A.M. Strel'chuk, V.V. Kozlovskii, N.S. Savkina, M.G. Rastegaeva, A.N. Andreev: Mater. Sci. Eng. Vol. 61-62, (1999), p.441.

[4] M. Levalois, I. Lhermitte-Sebire, P. Marie, E. Paumier, J. Vicens. Nucl. Instr. Meth. B, 107, (1996), p.239.

[5] L. Liszkay, K. Havancsak, M. -F. Barthe, P. Desgardin, L. Henry, Zs. Kajcsos, G. Battistig, E. Szilagyi, V.A. Skuratov: Mater. Sci. Forum Vol. 363, (2001), p.123.

DOI: https://doi.org/10.4028/www.scientific.net/msf.363-365.123

[6] E. Kalinina, G. Kholujanov, V. Solov'ev, A. Strel'chuk, A. Zubrilov, V. Kossov, R. Yafaev, A.P. Kovarski, A. Hallén, A. Konstantinov, S. Karlsson, C. Adås, S. Rendakova, V. Dmitriev: Appl. Phys. Lett. Vol. 77, (2000), p.3051.

DOI: https://doi.org/10.1063/1.1320868

[7] E. Kalinina, G. Kholujanov, G. Onushkin, D. Davydov, A. Strel'chuk, A. Konstantinov, A. Hallén, V. Skuratov, K. Havancsak: Semiconductors Vol. 38, (2004), p.1223.

[8] E.V. Kalinina, G.F. Kholuyanov, D.V. Davydov, A.M. Strel'chuk, A. Hallén, A.O. Konstantinov, V.V. Luchinin, A. Yu. Nikiforov: Semiconductors Vol. 37, (2003), p.1229.

DOI: https://doi.org/10.1134/1.1619523

[9] L. Patrick, W.J. Choyke: Phys. Rev. B, Vol. 5, (1972), p.3253.