Study of Ion Induced Damage in 4H-SiC
The damage produced by 2 MeV protons on a 4H-SiC Schottky diode has been investigated by monitoring the charge collection efficiency as the function of the ion fluence. A new algorithm based on the Shockley-Ramo-Gunn theorem has been developed to interpret the experimental results. The fitting procedure provides a parameter which is proportional to the average number of active electrical traps generated by a single ion, which can be profitably used to estimate the radiation hardness of the material.
Roberta Nipoti, Antonella Poggi and Andrea Scorzoni
A. Lo Giudice et al., "Study of Ion Induced Damage in 4H-SiC", Materials Science Forum, Vols. 483-485, pp. 389-392, 2005