Study of Ion Induced Damage in 4H-SiC

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The damage produced by 2 MeV protons on a 4H-SiC Schottky diode has been investigated by monitoring the charge collection efficiency as the function of the ion fluence. A new algorithm based on the Shockley-Ramo-Gunn theorem has been developed to interpret the experimental results. The fitting procedure provides a parameter which is proportional to the average number of active electrical traps generated by a single ion, which can be profitably used to estimate the radiation hardness of the material.

Info:

Periodical:

Materials Science Forum (Volumes 483-485)

Edited by:

Dr. Roberta Nipoti, Antonella Poggi and Andrea Scorzoni

Pages:

389-392

Citation:

A. Lo Giudice et al., "Study of Ion Induced Damage in 4H-SiC", Materials Science Forum, Vols. 483-485, pp. 389-392, 2005

Online since:

May 2005

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$38.00

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