Characterization of 4H-SiC Epitaxial Layers by Microwave Photoconductivity Decay

Abstract:

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A Microwave Photoconductivity Decay (M-PCD) technique which senses changes insample conductivity as carriers recombine following excitation by a laser pulse, has been used to determine the minority carrier recombination lifetime from the decay rate of carriers in 4H-SiC epitaxial layers. Decay times varying from 60 ns to 500 ns have been measured, with the decay increasing with thickness. Device simulations show that I-V characteristics of pin diodes fabricated with these epitaxial layers are compatible with the observed decay times.

Info:

Periodical:

Materials Science Forum (Volumes 483-485)

Edited by:

Roberta Nipoti, Antonella Poggi and Andrea Scorzoni

Pages:

405-408

DOI:

10.4028/www.scientific.net/MSF.483-485.405

Citation:

R.J. Kumar et al., "Characterization of 4H-SiC Epitaxial Layers by Microwave Photoconductivity Decay", Materials Science Forum, Vols. 483-485, pp. 405-408, 2005

Online since:

May 2005

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Price:

$35.00

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