Characterization of 4H-SiC Epitaxial Layers by Microwave Photoconductivity Decay
A Microwave Photoconductivity Decay (M-PCD) technique which senses changes insample conductivity as carriers recombine following excitation by a laser pulse, has been used to determine the minority carrier recombination lifetime from the decay rate of carriers in 4H-SiC epitaxial layers. Decay times varying from 60 ns to 500 ns have been measured, with the decay increasing with thickness. Device simulations show that I-V characteristics of pin diodes fabricated with these epitaxial layers are compatible with the observed decay times.
Dr. Roberta Nipoti, Antonella Poggi and Andrea Scorzoni
R.J. Kumar et al., "Characterization of 4H-SiC Epitaxial Layers by Microwave Photoconductivity Decay", Materials Science Forum, Vols. 483-485, pp. 405-408, 2005