Effects of Epitaxial Layer Growth Parameters on the Defect Density and on the Electrical Characteristics of Schottky Diodes

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The effects of the Si/H2 ratio on the growth of the epitaxial layer and on the epitaxial defects was studied in detail. A large increase of the growth rate has been observed with the increase of the silicon flux in the CVD reactor. Close to a Si/H2 ratio of 0.05 % silicon nucleation in the gas phase occurs producing a great amount of silicon particles that precipitate on the wafers. The epitaxial layers grown with a Si/H2 ratio of 0.03% show a low defect density and a low leakage current of the Schottky diodes realized on these wafers. For these diodes the DLTS spectra show thepresence of several peaks at 0.14, 0.75, 1.36 and 1.43 eV. For epitaxial layers grown with higher values of the Si/H2 ratio and then with an higher growth rate, the leakage current of the Schottky diodes increases considerably.

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Periodical:

Materials Science Forum (Volumes 483-485)

Edited by:

Dr. Roberta Nipoti, Antonella Poggi and Andrea Scorzoni

Pages:

429-432

Citation:

F. La Via et al., "Effects of Epitaxial Layer Growth Parameters on the Defect Density and on the Electrical Characteristics of Schottky Diodes", Materials Science Forum, Vols. 483-485, pp. 429-432, 2005

Online since:

May 2005

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$38.00

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[12] Ec-1, 36 eV low leakage diode high leakage diode Ec-0, 10 eV Ec-0, 71 eV Ec-1, 03 eV Ec-1, 36 eV Ec-1, 43 eV Trap concentration (cm-3 ) Temperature (K) Fig. 4 - DLTS spectrum of an epilayer grown with a Si/H2 ratio of 0. 03.

DOI: https://doi.org/10.1063/1.344189