Infrared Gratings Based on SiC/Si-Heterostructures
The fabrication process and the spectral properties of gratings for the infrared wavelength region on the basis of 3C-SiC layers grown by CVD on (100) oriented Si substrates are demonstrated. The formed 3C-SiC gratings on Si support two phonon polaritons as a function of the geometrical properties excited between 10.3 and 11.4 µm. They appear as a dip in the transmission spectrum. A third minimum in the transmission spectrum is caused by the substrate – grating interaction. The obtained resonances were polarization sensitive, i.e. they appeared only under TMpolarized illumination.
Roberta Nipoti, Antonella Poggi and Andrea Scorzoni
C. Rockstuhl et al., "Infrared Gratings Based on SiC/Si-Heterostructures", Materials Science Forum, Vols. 483-485, pp. 433-436, 2005