Infrared Gratings Based on SiC/Si-Heterostructures

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The fabrication process and the spectral properties of gratings for the infrared wavelength region on the basis of 3C-SiC layers grown by CVD on (100) oriented Si substrates are demonstrated. The formed 3C-SiC gratings on Si support two phonon polaritons as a function of the geometrical properties excited between 10.3 and 11.4 µm. They appear as a dip in the transmission spectrum. A third minimum in the transmission spectrum is caused by the substrate – grating interaction. The obtained resonances were polarization sensitive, i.e. they appeared only under TMpolarized illumination.

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Periodical:

Materials Science Forum (Volumes 483-485)

Edited by:

Dr. Roberta Nipoti, Antonella Poggi and Andrea Scorzoni

Pages:

433-436

Citation:

C. Rockstuhl et al., "Infrared Gratings Based on SiC/Si-Heterostructures", Materials Science Forum, Vols. 483-485, pp. 433-436, 2005

Online since:

May 2005

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$38.00

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DOI: https://doi.org/10.4028/www.scientific.net/msf.457-460.821

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