A New Model for the DI-Luminescence in 6H-SiC

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In a combined theoretical and experimental work, we have investigated the common DI photoluminescence in 6H-SiC material. We present an atomistic model which is able to explain the annealing behavior, i. e. the correlation with the silicon vacancy, the local vibrational modes and the excitonic-like character observed.

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Periodical:

Materials Science Forum (Volumes 483-485)

Edited by:

Dr. Roberta Nipoti, Antonella Poggi and Andrea Scorzoni

Pages:

465-468

Citation:

E. Rauls et al., "A New Model for the DI-Luminescence in 6H-SiC", Materials Science Forum, Vols. 483-485, pp. 465-468, 2005

Online since:

May 2005

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$38.00

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