Electron Irradiation Induced Vacancy Defects Detected by Positron Annihilation in 6H-SiC

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This paper presents positron lifetime results which give information on the nature of vacancy defects induced by electron irradiation in bulk nitrogen doped (nD-nA= 2.3x1017 cm-3) Cree 6H-SiC. The electron irradiations have been performed at different energies and with different fluences from 5􀂗1017 e-cm-2 to 3􀂗1018 e-cm-2. Positron lifetime have been measured with a 22NaCl source as a function of temperature between 15 and 300 K. The lifetime spectra were analyzed as sums of two exponential lifetime components 􀁗i weighted by the intensities Ii, convoluted with the resolution function. From the temperature dependence of the lifetime spectra we can infer that several vacancy defects exist in the electron irradiated n-type 6H-SiC. The nature of detected vacancy defects depends on the electron energy.

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Periodical:

Materials Science Forum (Volumes 483-485)

Edited by:

Dr. Roberta Nipoti, Antonella Poggi and Andrea Scorzoni

Pages:

473-476

Citation:

M. F. Barthe et al., "Electron Irradiation Induced Vacancy Defects Detected by Positron Annihilation in 6H-SiC", Materials Science Forum, Vols. 483-485, pp. 473-476, 2005

Online since:

May 2005

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$38.00

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