The VSiCSi(SiCCSi) Complex in Electron-Irradiated 6H-SiC

Abstract:

Article Preview

We identify the VSiCSi(SiCCSi) complex in electron-irradiated 6H-SiC samples. Based on the analysis of new photo-excited EPR spectra, and supported by theoretical calculations, it was possible to establish its microscopic structure and to conclude that this complex is formed from the first product of the Si-vacancy annealing, the VSiCSi complex (also known as P6/P7 centers).

Info:

Periodical:

Materials Science Forum (Volumes 483-485)

Edited by:

Dr. Roberta Nipoti, Antonella Poggi and Andrea Scorzoni

Pages:

477-480

DOI:

10.4028/www.scientific.net/MSF.483-485.477

Citation:

M.V.B. Pinheiro et al., "The VSiCSi(SiCCSi) Complex in Electron-Irradiated 6H-SiC", Materials Science Forum, Vols. 483-485, pp. 477-480, 2005

Online since:

May 2005

Export:

Price:

$35.00

[1] E. Rauls, T. Lingner, Z. Hajnal, S. Greulich-Weber, T. Frauenheim, and J. -M. Spaeth: phys. stat. sol. (b) vol. 217/2, (2000), p. R1.

DOI: 10.1002/(sici)1521-3951(200002)217:23.0.co;2-3

[2] Th. Lingner, S. Greulich-Weber, J. -M. Spaeth, U. Gerstmann, E. Rauls, Th. Frauenheim, and H. Overhof, Phys. Rev. B 64, (2001) 245212.

DOI: 10.1103/physrevb.64.245212

[3] M.V.B. Pinheiro, T. Lingner, F. Caudepon, S. Greulich-Weber, and J. -M. Spaeth: ICSCRM 2003 Lyon, Mat. Sci. Forum 457-460 (2004) 516.

DOI: 10.4028/www.scientific.net/msf.457-460.517

[4] E. Rauls, U. Gerstmann, M.V.B. Pinheiro, S. Greulich-Weber, and J. -M. Spaeth: ECSCRM 2004, Mat. Sci. Forum, this volume.

[5] J. -M. Spaeth, H. Overhof: Point Defects in Semiconductors and Insulators, (Springer 2002).

[6] M.V.B. Pinheiro, E. Rauls, U. Gerstmann, S. Greulich-Weber, and J. -M. Spaeth: Phys. Rev. B, submitted (2004).

[7] E. Rauls, A. Gali, P. Deak, and Th. Frauenheim: Phys. Rev. B, 68 (2003).

In order to see related information, you need to Login.