The VSiCSi(SiCCSi) Complex in Electron-Irradiated 6H-SiC


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We identify the VSiCSi(SiCCSi) complex in electron-irradiated 6H-SiC samples. Based on the analysis of new photo-excited EPR spectra, and supported by theoretical calculations, it was possible to establish its microscopic structure and to conclude that this complex is formed from the first product of the Si-vacancy annealing, the VSiCSi complex (also known as P6/P7 centers).



Materials Science Forum (Volumes 483-485)

Edited by:

Dr. Roberta Nipoti, Antonella Poggi and Andrea Scorzoni




M.V.B. Pinheiro et al., "The VSiCSi(SiCCSi) Complex in Electron-Irradiated 6H-SiC", Materials Science Forum, Vols. 483-485, pp. 477-480, 2005

Online since:

May 2005




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