M-Center in Low-Dose Proton Implanted 4H-SiC; Bistability and Change in Emission Rate


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Materials Science Forum (Volumes 483-485)

Edited by:

Dr. Roberta Nipoti, Antonella Poggi and Andrea Scorzoni




H. K.-Nielsen et al., "M-Center in Low-Dose Proton Implanted 4H-SiC; Bistability and Change in Emission Rate ", Materials Science Forum, Vols. 483-485, pp. 497-500, 2005

Online since:

May 2005




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DOI: https://doi.org/10.1016/s0925-9635(02)00212-1

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