M-Center in Low-Dose Proton Implanted 4H-SiC; Bistability and Change in Emission Rate

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Periodical:

Materials Science Forum (Volumes 483-485)

Edited by:

Roberta Nipoti, Antonella Poggi and Andrea Scorzoni

Pages:

497-500

DOI:

10.4028/www.scientific.net/MSF.483-485.497

Citation:

H. K.-Nielsen et al., "M-Center in Low-Dose Proton Implanted 4H-SiC; Bistability and Change in Emission Rate ", Materials Science Forum, Vols. 483-485, pp. 497-500, 2005

Online since:

May 2005

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$35.00

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