M-Center in Low-Dose Proton Implanted 4H-SiC; Bistability and Change in Emission Rate

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Materials Science Forum (Volumes 483-485)

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Dr. Roberta Nipoti, Antonella Poggi and Andrea Scorzoni

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497-500

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H. K.-Nielsen et al., "M-Center in Low-Dose Proton Implanted 4H-SiC; Bistability and Change in Emission Rate ", Materials Science Forum, Vols. 483-485, pp. 497-500, 2005

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May 2005

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DOI: https://doi.org/10.1016/s0925-9635(02)00212-1

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