Effective-Mass Theory of Shallow Donors in 4H-SiC


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The one-valley effective-mass approximation is developed for the case of uniaxial crystals with indirect bandgap and applied to the donor states in 4H-SiC. Good agreement is found between the theory and experiments providing data on the electronic states of the shallowest nitrogen donor in 4H-SiC. The ionization energy of this donor is deduced to be 61.35 ± 0.2 meV.



Materials Science Forum (Volumes 483-485)

Edited by:

Dr. Roberta Nipoti, Antonella Poggi and Andrea Scorzoni




I. G. Ivanov et al., "Effective-Mass Theory of Shallow Donors in 4H-SiC", Materials Science Forum, Vols. 483-485, pp. 511-514, 2005

Online since:

May 2005




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