Surface Band Structure Studies of Si Rich Reconstructions on 4H-SiC(1-100)
We have investigated Si-rich reconstructions of 4H-SiC( 00 1 1 ) surfaces by means of low-energy electron diffraction (LEED), x-ray photoelectron spectroscopy (XPS), and angleresolved ultraviolet photoelectron spectroscopy (ARUPS). The reconstructions of 4H-SiC( 00 1 1 ) were prepared by annealing the sample at different temperatures in a flux of Si. Depending on the temperature different reconstructions were observed: c(2×2) at T=800°C, c(2×4) at T=840°C. Both reconstructions show strong similarities in the electronic structure.
Roberta Nipoti, Antonella Poggi and Andrea Scorzoni
K. V. Emtsev et al., "Surface Band Structure Studies of Si Rich Reconstructions on 4H-SiC(1-100)", Materials Science Forum, Vols. 483-485, pp. 547-550, 2005