Surface Band Structure Studies of Si Rich Reconstructions on 4H-SiC(1-100)

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We have investigated Si-rich reconstructions of 4H-SiC( 00 1 1 ) surfaces by means of low-energy electron diffraction (LEED), x-ray photoelectron spectroscopy (XPS), and angleresolved ultraviolet photoelectron spectroscopy (ARUPS). The reconstructions of 4H-SiC( 00 1 1 ) were prepared by annealing the sample at different temperatures in a flux of Si. Depending on the temperature different reconstructions were observed: c(2×2) at T=800°C, c(2×4) at T=840°C. Both reconstructions show strong similarities in the electronic structure.

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Periodical:

Materials Science Forum (Volumes 483-485)

Edited by:

Dr. Roberta Nipoti, Antonella Poggi and Andrea Scorzoni

Pages:

547-550

Citation:

K. V. Emtsev et al., "Surface Band Structure Studies of Si Rich Reconstructions on 4H-SiC(1-100)", Materials Science Forum, Vols. 483-485, pp. 547-550, 2005

Online since:

May 2005

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$38.00

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