Surface Band Structure Studies of Si Rich Reconstructions on 4H-SiC(1-100)

Konstantin V. Emtsev; Thomas Seyller; Lothar Ley; A. Tadich; L. Broekman; E. Huwald; J.D. Riley; R.C.G. Leckey

doi:10.4028/www.scientific.net/MSF.483-485.547

Paper Titles

Kinetic Aspects of the Interstitial-Mediated Boron Diffusion in SiC
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3d-Transition Metals in Cubic and Hexagonal Silicon Carbide
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Hydrogen-Saturated SiC-Surfaces: Model Systems for Studies of Passivation, Reconstruction and Interface Formation
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First Principles Simulations of SiC-Based Interfaces
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Surface Band Structure Studies of Si Rich Reconstructions on 4H-SiC(1-100)
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Electrical Characterization of Defects in p-Type SiC Using Recombination Induced Conductivity Inversion
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Analysis of SiC Islands Formation during First Steps of Si Carbonization Process
p.555

ALD Deposited Al₂ O₃ Films on 6H-SiC(0001) after Annealing in Hydrogen Atmosphere
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SiC/SiO₂ Interface States: Properties and Models
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HomeMaterials Science ForumMaterials Science Forum Vols. 483-485Surface Band Structure Studies of Si Rich...

Surface Band Structure Studies of Si Rich Reconstructions on 4H-SiC(1-100)

Abstract:

We have investigated Si-rich reconstructions of 4H-SiC( 00 1 1 ) surfaces by means of low-energy electron diffraction (LEED), x-ray photoelectron spectroscopy (XPS), and angleresolved ultraviolet photoelectron spectroscopy (ARUPS). The reconstructions of 4H-SiC( 00 1 1 ) were prepared by annealing the sample at different temperatures in a flux of Si. Depending on the temperature different reconstructions were observed: c(2×2) at T=800°C, c(2×4) at T=840°C. Both reconstructions show strong similarities in the electronic structure.

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Silicon Carbide and Related Materials 2004

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Materials Science Forum (Volumes 483-485)

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547-550

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.483-485.547

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May 2005

Authors:

Konstantin V. Emtsev, Thomas Seyller, Lothar Ley, A. Tadich, L. Broekman, E. Huwald, J.D. Riley, R.C.G. Leckey

Keywords:

a-Planes, Photoelectron Spectroscopy, Reconstruction

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