Epitaxial Deposition of Silicon Carbide Films in a Horizontal Hot-Wall CVD Reactor


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The present production processes for epitaxial SiC do not allow the matching of productivity with the material quality requested by the microelectronics market. Here, to respond to such a demand, a combined experimental and multi-scale – multi-hierarchy modeling approach was adopted. Models allow to verify a priori the role of process operative parameters on the performance ones for both the final product and of the process itself, like growth rate uniformity, film stoichiometry and dopants incorporation, homogeneous nucleation of particulate, microdefects and film morphology. Specifically, in this work the developing of a lumped deposition mechanism is addressed



Materials Science Forum (Volumes 483-485)

Edited by:

Dr. Roberta Nipoti, Antonella Poggi and Andrea Scorzoni




A. Veneroni et al., "Epitaxial Deposition of Silicon Carbide Films in a Horizontal Hot-Wall CVD Reactor", Materials Science Forum, Vols. 483-485, pp. 57-60, 2005

Online since:

May 2005




[1] A. Veneroni, F. Omarini, D. Moscatelli, M. Masi, S. Leone, M. Mauceri, G. Pistone and G. Abbondanza: J. Crystal Growth, in press (2004).

DOI: https://doi.org/10.1016/j.jcrysgro.2004.10.104

[2] M. Masi and S. Kommu: Epitaxial Silicon, D. Crippa, M. Masi, D. L. Rode Eds. (Academic Press, UK, 2001), p.185.

[3] S. Carrà and M. Masi: Prog. Crystal Growth and Charact. Vol. 37 (1998), p.1.

[4] M.D. Allendorf, R.J. Kee: J. Electrochem. Soc. Vol. 138 (1991), p.841.

[5] Ö. Danielsson, A. Henry and E. Janzén: J. Crystal Growth Vol. 243 (2002), p.170.

[6] D.D. Avrov: J. Crystal Growth Vol. 198/199 (1999), p.1011.

[7] F. Omarini: MS Thesis, Politecnico di Milano, April (2004).

[8] H. Rabitz, M. Kramer and D. Dacol: Ann. Rev. Phys. Chem. Vol. 34 (1983) p.419.