Aluminium Implantation Induced Linear Surface Faults in 4H-SiC

Abstract:

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New results are presented of a surface trench defect observed during anneal of room temperature Al implants. The size of the surface defect is proportional to anneal temperature and occurs predominantly in the implanted zone. Signs of lattice strain are observed outside the implanted zone as well.

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Periodical:

Materials Science Forum (Volumes 483-485)

Edited by:

Dr. Roberta Nipoti, Antonella Poggi and Andrea Scorzoni

Pages:

613-616

Citation:

N. G. Wright et al., "Aluminium Implantation Induced Linear Surface Faults in 4H-SiC", Materials Science Forum, Vols. 483-485, pp. 613-616, 2005

Online since:

May 2005

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$38.00

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