Electrical Behavior of Implanted Aluminum and Boron near Tail Region in 4H-SiC after High-Temperature Annealing

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The authors have investigated electrical behavior of implanted Al and B atoms near a “tail” region in 4H-SiC (0001) after high-temperature annealing. For aluminum-ion (Al+) implantation, slight in-diffusion of Al implants occurs in the initial stage of annealing at 1700 °C. Nearly all of implanted Al atoms, including the in-diffused Al atoms were activated by annealing at 1700 °C for 1 min. Several electrically deep centers are formed by Al+ implantation. The concentrations of the centers are 3-4 orders-of-magnitude lower than that of implanted Al-atom concentration. For boron-ion (B+) implantation, significant out- and in-diffusion of B implants occur in the initial stage of annealing at 1700 °C. Most of the in-diffused B implants work as B acceptors. A high density of B-related D center exists near the tail region. To suppress the B diffusion, a ten-times higher dose of carbon-ion (C+) co-implantation is effective. However, high concentrations of additional deep centers are introduced by such high-dose C+ co-implantation.

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Periodical:

Materials Science Forum (Volumes 483-485)

Edited by:

Dr. Roberta Nipoti, Antonella Poggi and Andrea Scorzoni

Pages:

617-620

Citation:

Y. Negoro et al., "Electrical Behavior of Implanted Aluminum and Boron near Tail Region in 4H-SiC after High-Temperature Annealing", Materials Science Forum, Vols. 483-485, pp. 617-620, 2005

Online since:

May 2005

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$38.00

[1] T. Troffer, M. Schadt, T. Frank, H. Itoh, G. Pensl, J. Heindl, H.P. Strunk and M. Maier: Phys. Status. Solidi A Vol. 162 (1997), p.277.

DOI: https://doi.org/10.1002/1521-396x(199707)162:1<277::aid-pssa277>3.0.co;2-c

[2] Y. Negoro, K. Katsumoto, T. Kimoto and H. Matsunami: Mater. Sci. Forum Vol. 457-460 (2004), p.933.

[3] H. Okushi and Y. Tokumaru: Jpn. J. Appl. Phys. Suppl. Vol. 20-1 (1981), p.261.

[4] S.G. Sridhara, L.L. Clemen, R.P. Devaty, W.J. Choyke, D.J. Larkin, H.S. Kong, T. Troffer and G. Pensl: J. Appl. Phys. Vol. 83 (1998), p.7909.

DOI: https://doi.org/10.1063/1.367970

[5] M. Laube, G. Pensl and H. Itoh: Appl. Phys. Lett. Vol. 77 (2000), p.3188.

[6] R. Kumar, J. Kozima and T. Yamamoto: Jpn. J. Appl. Phys. Vol. 39 (2000), p.2001 Fig. 5: DLTS spectra for B+/C+ co-implanted 4H-SiC: (a) only B+ implanted (b) B+/C+ co-implanted (B: C = 1: 2), and (c) B+/C+ co-implanted (B: C = 1: 10).

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