Ar Annealing at 1600°C and 1650°C of Al+ Implanted p+/n 4H-SiC Diodes: Analysis of the J-V Characteristics Versus Annealing Temperature

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We report on the electrical characterization of Al+ implanted p+/n 4H-SiC diodes via a planar technology. Hot implantation at 400°C and post implantation annealing at 1600°C and 1650°C in high purity Argon ambient were done for the realization of p+/n diodes. The current voltage characteristics of the p+/n diodes and the resistivity of the implanted layer were measured at room temperature. The majority of the 136 measured diodes had a turn on voltage of 1.75 V for both annealing temperatures. The 1600°C annealed diodes showed an almost exponential forward characteristic with ideality factor equal to 1.4, an average reverse leakage current density equal to (4.8 ± 0.1)×10-9 A/cm2 at –100 V, and a break down voltage between 600 and 900V. The 1650°C annealed diodes often had forward “excess current component” that deviates from the ideal forward exponential trend. The average reverse leakage current density was equal to (2.7 ± 0.5)×10-8 A/cm2 at –100 V, and the breakdown voltage was between 700 and 1000V, i.e. it approached the theoretical value for the epitaxial 4H-SiC layer.

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Periodical:

Materials Science Forum (Volumes 483-485)

Edited by:

Dr. Roberta Nipoti, Antonella Poggi and Andrea Scorzoni

Pages:

625-628

Citation:

F. Bergamini et al., "Ar Annealing at 1600°C and 1650°C of Al+ Implanted p+/n 4H-SiC Diodes: Analysis of the J-V Characteristics Versus Annealing Temperature", Materials Science Forum, Vols. 483-485, pp. 625-628, 2005

Online since:

May 2005

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$38.00

[1] Mulpuri V. Rao: Solid-State Electronics Vol. 47 (2003), p.213.

[2] V. Heera, D. Panknin and W. Skorupa: Applied Surface Science Vol. 184 (2001), p.307.

[3] S. Seshadri, G.W. Eldridge and A.K. Agarwal: Appl. Phys. Lett. Vol. 72 (1998), p. (2026).

[4] M. Capano, S. Ryu, M.R. Melloch, J.A. Cooper, K. Rottner, S. Karlsson, N. Nordell, A. Powell and D.E. Walker: J. of Electron. Mater. Vol. 28 (1999), p.214.

[5] Y. Zhang, W.J. Weber, W. Jiang, C.M. Wang, A. Hallen and G. Possnert: J. Appl. Physics, Vol. 93 (2003), p. (1954).

[6] J.M. Bluet, J. Pernot, J. Camassel, S. Conteras, J.L. Robert, J.F. Michaud and T. Billon: J. Appl. Physics Vol. 88 (2000), p. (1971).

[7] M. Capano, S. Ryu, M.R. Melloch, J.A. Cooper and M.R. Buss: J. Electron. Mater. Vol. 27 (1998), p.370.

[8] T. Ohyanagi, T. Ohno, K. Amemiya and A. Watanabe: Material Science Forum Vol. 433-436 (2003), p.835.

[9] N. Keskar, K. Shenai and P. Neudeck: Material Science Forum Vol. 338-342 (2000), p.1351.