P-Type SiC Layers Formed by VLS Induced Selective Epitaxial Growth


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Al-Si patterns were formed on n-type 4H-SiC substrate by a photolithographic process including wet Al etching and Si/SiC reactive ion etching (RIE) process. RF 1000°C annealing under C3H8 flow was performed to obtain p+ SiC layers by a Vapour-Liquid-Solid (VLS) process. This method enables to grow layers with different width (up to 800 µm) and various shapes. Nevertheless the remaining Al-based droplets on the largest patterns are indicators of crack defects, going through the p+ layer down to the substrate. SIMS analyses have shown an Al profile with high doping concentration near the surface, high N compensation and Si/C stoechiometry variation between the substrate and the VLS layer. The hydrogen profile follows the Al profile in the VLS layer with an overshoot at the VLS/substrate interface. I-V measurements performed directly on the semiconductor layers have confirmed the formed p-n junction and allowed to measure a sheet resistance of 5.5 kW/ı



Materials Science Forum (Volumes 483-485)

Edited by:

Dr. Roberta Nipoti, Antonella Poggi and Andrea Scorzoni




M. Lazar et al., "P-Type SiC Layers Formed by VLS Induced Selective Epitaxial Growth", Materials Science Forum, Vols. 483-485, pp. 633-636, 2005

Online since:

May 2005




[1] Y. Sugawara, D. Takayama, K. Asanoet, R. Singh, J. Palmour and T. Hayashi: Proc. of ISPSD'2001, Osaka, Japan, (2001), p.27.

[2] M.K. Linnarson, P.O.Å. Persson, H. Bleichner, M.S. Jansson, H. Andersson, S. Karlsson, R. Yakimova and B.G. Svensson.: Mater. Sci. Forum Vol 353-356 (2001) p.583.

[3] M. Lazar, C. Raynaud, D. Planson, J. -P. Chante, M. -L. Locatelli, L. Ottaviani, and Ph. Godignon: J. Appl. Phys. Vol. 94 (2003), p.2992.

[4] C. Jacquier, G. Ferro, P. Godignon, J. Montserrat, O. Dezellus and Y. Monteil : Mater. Sci. Forum Vol. 457-460 (2004) p.241.

DOI: https://doi.org/10.4028/www.scientific.net/msf.457-460.241

[5] V. Heera, D. Panknin, W. Skorupa: Applied Surface Science Vol. 184 (2001), p.307.