500 keV nitrogen implantations at different tilt angles (0o, 0.5o, 1.2o, 1.6o, 4o) with respect to the c-axis of 6H-SiC were carried out. Radiation damage distributions have been investigated by Backscattering Spectrometry combined with channeling technique (BS/C) using 3550 keV 4He+ ion beam. A comparative simultaneous evaluation of the damage depth distributions in the Si and C sublattices of 6H-SiC led to a correction factor of 0.8 in the electronic stopping power of 4He+ ions along <0001> channel. Full-cascade Crystal-TRIM simulations with the same set of damage accumulation model parameters could reconstruct the measured shapes and heights of damage distributions for all implantation tilt angles. Secondary defect generation effects in addition to the primary point defect accumulation were assumed in the analysis.